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1 MRF5S19100Lr3 MRF5S19100Lsr3 motorola rf device data the rf mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications with frequencies up to 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2?carrier n?cdma performance for v dd = 28 volts, i dq = 1000 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 ?885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 ?2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power ? 22 watts avg. power gain ? 13.9 db efficiency ? 25.5% acpr ? ?50.7 db im3 ? ?36.5 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 1960 mhz, 100 watts cw output power ? excellent thermal stability ? characterized with series equivalent large?signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 236 1.35 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 75 c, 100 w cw case temperature 70 c, 22 w cw r jc 0.74 0.76 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF5S19100L/d semiconductor technical data 1990 mhz, 22 w avg, 2 x n?cdma 28 v lateral n?channel rf power mosfets case 465?06, style 1 ni?780 MRF5S19100Lr3 case 465a?06, style 1 ni?780s MRF5S19100Lsr3 ? motorola, inc. 2003 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19100Lr3 MRF5S19100Lsr3 2 motorola rf device data esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 240 adc) v gs(th) ? 2.7 ? vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) ? 3.7 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 2.4 adc) v ds(on) ? 0.26 ? vdc forward transconductance (v ds = 10 vdc, i d = 2.4 adc) g fs ? 6.3 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c rss ? 2.2 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier n?cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth and im3 measured in 1.2288 mhz bandwidth. peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf. power gain (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 12.5 13.9 ? db drain efficiency (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) 24 25.5 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); im3 measured over 1.2288 mhz bandwidth @ f1 ?2.5 mhz and f2 = +2.5 mhz) im3 ? ?36.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); acpr measured over 30 khz bandwidth @ f1 ?885 mhz and f2 =+885 mhz) acpr ? ?50.7 ?48 dbc input return loss (v dd = 28 vdc, p out = 22 w avg., i dq = 1000 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) irl ? ?13 ?9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
3 MRF5S19100Lr3 MRF5S19100Lsr3 motorola rf device data z9 0.590 x 0.071 microstrip z10 0.450 x 1.133 microstrip z11 0.450 x 0.141 microstrip z12 0.490 x 0.080 microstrip z13 0.085 x 0.080 microstrip z14 1.124 x 0.080 microstrip pcb arlon gx?0300?55?22, 0.030 , r = 2.55 figure 1. MRF5S19100Lr3(lsr3) test circuit schematic z1, z3 0.140 x 0.080 microstrip z2 0.450 x 0.080 microstrip z4 0.525 x 0.080 microstrip z5 0.636 x 0.141 microstrip z6 0.650 x 0.050 microstrip z7 0.320 x 1.299 microstrip z8 0.091 x 1.133 microstrip table 1. MRF5S19100Lr3(lsr3) test circuit component designations and values part description value, p/n or dwg manufacturer b1 short rf bead 95f786 newark c1 22 pf chip capacitor, b case 100b220cp 500x atc c2 10 pf chip capacitor, b case 100b100cp 500x atc c3 1 f, 50 v tantalum capacitor t494c105(1)050as kemet c4, c12 0.1 f chip capacitors, b case cdr33bx104akws kemet c5, c11 1k pf chip capacitors, b case 100b102jp 500x atc c6 2.7 pf chip capacitor, b case 100b2r7bp 500x atc c7 4.3 pf chip capacitor, b case 100b4r3jp 500x atc c8 10 f, 35 v tantalum capacitor t494d106(1)035as kemet c9, c10, c13, c14 22 f, 35 v tantalum capacitors t494x226(1)035as kemet c15 0.6 ? 4.5 gigatrim variable capacitor 44f3358 newark c16 2.2 pf chip capacitor, b case 100b2r2bp 500x atc c17* 0.3 pf chip capacitor, b case 100b0r3bp 500x atc r1 1 k chip resistor d5534m07b1k00r newark r2 560 k chip resistor cr1206 564jt newark r3, r4 12 chip resistors rm73b2b120jt garrett electronics w1 1 turn 14 gauge wire * need for part will vary from fixture to fixture. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19100Lr3 MRF5S19100Lsr3 4 motorola rf device data figure 2. MRF5S19100Lr3(lsr3) test circuit component layout cut out area mrf5s19100 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
5 MRF5S19100Lr3 MRF5S19100Lsr3 motorola rf device data typical characteristics figure 3. 2?carrier n?cdma broadband performance figure 4. two?tone power gain versus output power figure 5. third order intermodulation distortion versus output power figure 6. intermodulation distortion products versus tone spacing figure 7. pulse cw output power versus input power f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19100Lr3 MRF5S19100Lsr3 6 motorola rf device data typical characteristics figure 8. 2?carrier n?cdma acpr, im3, power gain and drain efficiency versus output power figure 9. 2?carrier n?cdma spectrum figure 10. mtbf factor versus junction temperature f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
7 MRF5S19100Lr3 MRF5S19100Lsr3 motorola rf device data figure 11. series equivalent input and output impedance ? f mhz z source ? z load ? 1930 1960 1990 4.45 ? j5.32 5.12 ? j5.45 4.53 ? j5.40 1.98 ? j2.58 1.83 ? j2.55 1.60 ? j2.15 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.
f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19100Lr3 MRF5S19100Lsr3 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
9 MRF5S19100Lr3 MRF5S19100Lsr3 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19100Lr3 MRF5S19100Lsr3 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
11 MRF5S19100Lr3 MRF5S19100Lsr3 motorola rf device data package dimensions case 465?06 issue f ni?780 MRF5S19100Lr3 d g k c e h s f q 2x b b (flange) ! aa (flange) t n (lid) m (insulator) (insulator) r (lid) case 465a?06 issue f ni?780s MRF5S19100Lsr3 d k c e h f u (flange) 4x z (lid) 4x " b b (flange) 2x ! a a (flange) t n (lid) m (insulator) r (lid) s (insulator) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19100Lr3 MRF5S19100Lsr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2003 how to reach us: usa/europe/locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3?20?1, minami?azabu, minato?ku, tokyo 106?8573, japan p.o. box 5405, denver, colorado 80217 81?3?3440?3569 1?800?521?6274 or 480?768?2130 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong kong 852?26668334 home page : http://motorola.com/semiconductors MRF5S19100L/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .

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